| 摘要 |
PURPOSE: A method for forming a storage node of a semiconductor device is provided to increase a surface area of a storage node by preventing the separation of particles in an MPS(Meta stable PolySilicon) layer. CONSTITUTION: A method for forming a storage node of a semiconductor device comprises the following steps. An insulating interlayer(22) with a storage node contact plug(23) is formed on an upper portion of a semiconductor substrate(21). A sacrificial insulating layer(24) and an etching barrier(25) are formed on an upper portion of the whole structure. The storage node contact plug(23) is exposed by etching the sacrificial insulating layer(24) and the etching barrier(25). A conductive layer for storage node is formed on the surface of the whole structure. A photoresist layer is formed thereon. A cylinder type storage node is formed by etching the photoresist layer and the conductive layer for storage node. The remaining photoresist layer is removed and the cylinder type storage node is rinsed. An MPS layer(30) is formed on a surface of the cylinder type storage node.
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