| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent a step difference between a cell region and a peripheral region, by forming a capacitor of a buried type. CONSTITUTION: A buried oxidation layer(7) is formed on a base substrate(11). Field oxidation layers(2) are formed on the buried oxidation layer. The first insulating layers(3) are formed on a portion of the field oxidation layer and on the buried oxidation layer adjacent to the field oxidation layer. A storage node electrode(4) is buried in the buried oxidation layer. A capacitor(10) is composed of a dielectric layer(5) surrounding the storage node electrode and a plate electrode(6) surrounding the dielectric layer. A source region is formed on the exposed storage node electrode. The second insulating layer(13) is formed on the first insulating layer and field oxidation layer, having the same thickness as the source region. A channel region is formed on the source region. A gate oxidation layer(15) surrounds a part of an upper surface of the channel region and a side surface thereof. A gate electrode(16) is formed on a side of the gate oxidation layer. A drain region is formed on the channel region. The third insulation layer(17) is formed on the gate electrode, gate oxidation layer and second insulating layer, having the same height as the drain region. The fourth insulating layer(19) is formed on the third insulating layer and drain region. A wordline and a bitline respectively contacting the gate electrode and drain region are formed on the fourth insulating layer.
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