| 摘要 |
PURPOSE: A fabrication method of capacitors of semiconductor devices is provided to improve properties of capacitors by preventing a diffusion of oxygen into a lower electrode. CONSTITUTION: A contact hole is formed to expose a silicon substrate(21) by selectively etching an interlayer dielectric(22). A polysilicon plug(23) and a metal diffusion barrier layer made of a Ti film(24) and a TiN film(25) are sequentially formed in the contact hole. A lower electrode(29) having an oxygen diffusion barrier layer(27) is formed on the metal diffusion barrier layer. At this time, the oxygen diffusion barrier layer(27) is composed of a silicon nitride(Si3N4) and surrounded by the lower electrode(29). Then, a dielectric film(30) and an upper electrode(31) are sequentially formed on the lower electrode.
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