发明名称 DYNAMIC RANDOM ACCESS MEMORY HAVING SENSE AMPLIFIER OF HALF-FEEDBACK-WRITE STRUCTURE
摘要 PURPOSE: A dynamic random access memory is provided to improve operation speed and to reduce consumption power. CONSTITUTION: A dynamic random access memory comprises a sense amplifier(100), a first switching part(310), a second switching part(320), a third switching part(410), a fourth switching part(420) and a bit-line isolation controller. The sense amplifier(100) senses data from bit lines and amplifies the sensed data. The first switching part(310) connects a positive bit line of a high block to a positive input/output terminal of the sense amplifier(100) according to a control signal(Bish). The second switching part(320) connects a negative bit line of the high block to a negative input/output terminal of the sense amplifier(100) according to the control signal(Bish). The third switching part(410) connects a positive bit line of a low block to the positive input/output terminal of the sense amplifier(100) according to a control signal(Bisl). The fourth switching part(420) connects a negative bit line of the low block to the negative input/output terminal of the sense amplifier(100) according to the control signal(Bisl). The bit-line isolation controller enables one of the switching parts, and disables the other switching parts before a selected word line is activated.
申请公布号 KR20010005099(A) 申请公布日期 2001.01.15
申请号 KR19990025894 申请日期 1999.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAE, JAE UK;SIM, YEONG BO
分类号 G11C7/06;(IPC1-7):G11C7/06 主分类号 G11C7/06
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