发明名称 FIELD EMISSION DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A field emission display device and manufacturing method thereof is provided to improve picture quality characteristics by preventing a crosstalk among R, G and B phosphors. CONSTITUTION: An upper substrate(30) and lower substrate(20) is located oppositely to each other with predetermined distance. A cathode electrode(21) structures are formed on the opposite surface of the lower substrate with stripe shape. An anode electrode(31,310) is formed on the opposite surface of the upper substrate. A black matrixes(32) are formed on the surface of the anode electrode of the upper substrate corresponding to a space between the cathode electrode structures. R, G, and B phosphors(33a,33b,33c) are formed at a space between the black matrixes corresponding to the cathode electrode structures. The black matrixes are bigger than 20um and smaller than distance between the upper and lower substrates
申请公布号 KR20010003043(A) 申请公布日期 2001.01.15
申请号 KR19990023174 申请日期 1999.06.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, IK HWAN;KO, YEONG UK;LEE, GYO UNG;SUNG, UN CHEOL
分类号 H01J1/30;H01J29/08;H01J29/86;H01J63/04;(IPC1-7):H01J1/30 主分类号 H01J1/30
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