发明名称 |
FIELD EMISSION DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A field emission display device and manufacturing method thereof is provided to improve picture quality characteristics by preventing a crosstalk among R, G and B phosphors. CONSTITUTION: An upper substrate(30) and lower substrate(20) is located oppositely to each other with predetermined distance. A cathode electrode(21) structures are formed on the opposite surface of the lower substrate with stripe shape. An anode electrode(31,310) is formed on the opposite surface of the upper substrate. A black matrixes(32) are formed on the surface of the anode electrode of the upper substrate corresponding to a space between the cathode electrode structures. R, G, and B phosphors(33a,33b,33c) are formed at a space between the black matrixes corresponding to the cathode electrode structures. The black matrixes are bigger than 20um and smaller than distance between the upper and lower substrates
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申请公布号 |
KR20010003043(A) |
申请公布日期 |
2001.01.15 |
申请号 |
KR19990023174 |
申请日期 |
1999.06.21 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KO, IK HWAN;KO, YEONG UK;LEE, GYO UNG;SUNG, UN CHEOL |
分类号 |
H01J1/30;H01J29/08;H01J29/86;H01J63/04;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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