| 摘要 |
PURPOSE: A method for forming a device isolating film of a semiconductor device is provided to improve the reliability and yield rate of the semiconductor device by enhancing the oxide film filling feature. CONSTITUTION: A trench is formed by etching a predetermined area of a semiconductor substrate(21). Then, a thermal oxide film(24) is formed on the structure. The first oxide film(25) having a low density O3 and the second oxide film(26) having a high density O3 are sequentially formed on an upper surface of the thermal oxide film(24). After that, the first and second oxide films(25,26) and the thermal oxide film(24) are polished thereby forming a device isolating film. The first oxide film(25) has a thickness in the range of 200 to 300 angstrom. The second oxide film(26) has a thickness in the range of 4000 to 10000 angstrom.
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