| 摘要 |
PURPOSE: A vertical TFT(Thin Film Transistor) and a method for manufacturing the same are provided to improve a current responding speed and a current driving capability by shortening a distance between a source and a drain. CONSTITUTION: A drain(11), a first ohmic contact layer(13), an optic-electric conversation layer(21), a second ohmic contact layer(23) and a source(25) are sequentially formed on a transparent substrate(100). A gate(17) is formed at both sides of the first ohmic contact layer(13) so as to surround by a first and a second insulating layers(15,19). That is, the drain(11) and the source(25) are located in upper part and lower part of the gate(17), respectively, thereby shortening the distance between the source and the drain. |
