发明名称 METHOD FOR MANAGING SPUTTERING STAGE
摘要 PROBLEM TO BE SOLVED: To provide a method for managing a sputtering stage stabilizing the quality of a product by maintaining the adhesion of a plating substrate to an insulating base material to a high level. SOLUTION: In pretreatment at the time of forming a plating substrate by DC sputtering on an insulating base material 4 composed of a polyamide resin, the insulating base material 4 is fitted to an electrode 2, and moreover, plasma bombardment is applied on the surface of the insulating base material 4 by using gaseous nitrogen as reverse sputtering gas. At the time of the plasma bombardment, at least one among vacuum pressure before the introduction of the gaseous nitrogen into a chamber 1 deposited with the insulating base material 4, high frequency incident waves on the electrodes 2 and 3 in the process of the plasma bombardment, high frequency reflecting waves from the electrodes 2 and 3 and the pressure of the gaseous nitrogen is controlled as a managing item. For increasing the forming rate of polar functional groups on the surface of the insulating base material 4 at the time of the plasma bombardment by controlling these managing items, the d.c. bias voltage in the process of the plasma bombardment is managed or controlled.
申请公布号 JP2001011620(A) 申请公布日期 2001.01.16
申请号 JP19990180913 申请日期 1999.06.25
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 ASAOKA SHIGEKI;YAMANAKA HIROSHI;KAGAWA EIJI
分类号 H05K3/18;C23C14/34;(IPC1-7):C23C14/34 主分类号 H05K3/18
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