发明名称 METHOD FOR FORMING MASK OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A proximity effect related to a photolithography and an etch processes can solve by only using a mask forming tool when routing a metal pattern. CONSTITUTION: A step is to form the first layer constructed by a via including a plurality of metal patterns. Thereafter, a step is to form a space layer for discriminating whether the separated distance between the metal patterns is less than a constant value. Then, a step is to form the second layer oversized with a width that the first layer is not contacted with the space layer. Next, a step is to form the third layer(49) for discriminating the extent of alignment of the first and second layers. Since the metal patterns being overlapped with a via represents almost the same value, the metal patterns minimizes the overlap of the metal patterns and the via. When a space between metal patterns is larger than 'd', a result oversizing the size of the metal pattern toward X, Y directions can obtain.
申请公布号 KR20010005242(A) 申请公布日期 2001.01.15
申请号 KR19990026045 申请日期 1999.06.30
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 AHN, JAE GYEONG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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