发明名称 OUTPUT BUFFER OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An output buffer of a semiconductor memory device is provided to reduce a peak current due to a pull-down transistor turning on so that a level of supplying voltage is stabilized. CONSTITUTION: An output buffer of a semiconductor memory device includes a pull-up transistor driver(10), a pull-down transistor driver(70), a pull-up transistor(30), a pull-down transistor(40), a bypass circuit(50) and a supplying-voltage level detector(60). The supplying-voltage level detector(60) detects a level of a supplying voltage(Vcc), and outputs a first and a second level sensed signals(aa,bb) to the pull-down transistor driver(70). The pull-down transistor driver(70) outputs driving signals of different gradients to a gate of the pull-down transistor(40), according to the first and second level sensed signals(aa,bb) from the supplying-voltage level detector(60).
申请公布号 KR20010003520(A) 申请公布日期 2001.01.15
申请号 KR19990023833 申请日期 1999.06.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SANG HWAN;NOH, IL GUK;SONG, NAM HYEONG
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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