GAN SEMICONDUCTOR DEVICE OF DOUBLE HETERO STRUCTURE

摘要

PURPOSE: A GaN semiconductor device of a double hetero structure is provided to control In composition of an active layer and to mitigate a lattice mismatch between crystal growth layers, by forming a low temperature crystal growth layer and a buffer layer between the active layer and a p-type layer. CONSTITUTION: A GaN semiconductor device of a double hetero structure has a stacked structure which sequentially consists of an n-type contact layer(220), an n-type clad layer(230), an active layer(240), a p-type clad layer(250) and a p-type contact layer(260) on a substrate(200). The GaN semiconductor device further comprises a low temperature crystal growth layer(243) and a buffer layer between the active layer and the p-type clad layer.