| 摘要 |
PURPOSE: An image sensor having an optically designed layer for improving an optical transmissivity is provided to increase the light transmissivity of insulation layers stacked on a photo diode for increasing the photo sensitivity of a CMOS image sensor, thereby improving the resolution and performance of the CMOS image sensor. CONSTITUTION: An image sensor having an optically designed layer for improving an optical transmissivity includes a photosensitive element, at least one delectric layer stacked on the photosensitive element, a passivation layer, and an optically designed optical layer formed on the delectric layer for improving the light transmissivity of the delectric layer, wherein the optical layer has the index of refraction root times of the delectric layer, and the thickness of a quarter-wave optical thickness(QWOT) of a short wavelength band.
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