METHOD FOR FORMING POLYSILICON PLUG PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming polysilicon plug pad of a semiconductor device is provided to improve a yield by preventing a residue of a polysilicon in a peripheral region. CONSTITUTION: After forming polysilicon patterns(23) on a semiconductor substrate(21), a nitride layer is formed on the resultant structure. After depositing a BPSG layer on the resultant structure, the BPSG layer is selectively etched by using a cell opening mask so as to expose the nitride layer of a cell region. A nitride spacer(26a) is formed at both sidewalls of the polysilicon patterns(23) by etch-back the exposed nitride layer. After removing the cell opening mask, a polysilicon layer(29) and an anti-reflective layer(30) are sequentially formed on the resultant structure. A polysilicon plug pad(31) is formed at the cell region by selectively etching the anti-reflective layer and the polysilicon layer.