| 摘要 |
PURPOSE: A flash memory device is provided to prevent a wrong operation due to software by programming each memory cell. CONSTITUTION: A flash memory device includes memory blocks(BLOCK0,BLOCK1,...BLOCKj) and a plurality of bit lines. The memory blocks provide a plurality of strings(S0,S1,,..Sm-1,Sm). The plurality of bit lines correspond to each of the strings and are arranged through the memory blocks. The strings includes a string selecting transistor, a switch transistor, first and second memory cell transistors, and a ground selecting transistor. The string selecting transistor provides the first current electrode connected to a corresponding bit line and a gate electrode connected to the first selecting signal. The switch transistor provides a gate electrode connected to the first and second current electrodes and the second selecting signal. The plurality of first memory cell transistors are connected between the second current electrode of the string selecting transistor and the first current electrode of the switch transistor. The ground selecting transistor provides the first current electrode connected to a common ground line and a gate electrode connected to a third selecting signal. The plurality of second memory cell transistors are connected between the second current electrode of the switch transistor and the second current electrode of the ground selecting transistor.
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