SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for fabricating the same are provided to improve the refresh feature of the semiconductor device by surrounding a titanium film with a spacer before a passivation film is formed. CONSTITUTION: The first conductive film pattern(12) is formed on a semiconductor substrate(10) on which an insulating film(11) is formed. An interlayer insulating film(13) is formed on a surface of the semiconductor substrate(10). The interlayer insulating film(13) is etched in such a manner that a part of the first conductive film pattern(12) is exposed thereby forming a contact hole. A titanium film(14) is formed on a surface of the contact hole and on the upper surface of the interlayer insulating film(13). The second conductive film is formed on the titanium film(14). The second conductive film pattern(15) is formed by patterning the second conductive film and the titanium film(14).