METHOD FOR FORMING POLYCIDE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A polycide electrode forming method of a semiconductor device is to prevent a remainder of a needless polysilicon due to a heterogeneous substance layer generated at an interface between a polysilicon and a silicide by conducting a washing after the polysilicon is deposited and before the silicide is deposited. CONSTITUTION: A method for forming a polycide electrode of a semiconductor device comprises the steps of: forming a polysilicon film(32) on a semiconductor substrate(30) with a predetermined lower portion formed thereon; washing the polysilicon film; forming a silicide film(33) on the polysilicon film; selectively etching the silicide film; removing a heterogeneous substance layer formed on the polysilicon film; and selectively etching the polysilicon film. The step of removing the heterogeneous substance layer performs an oxide film dry etching process and an oxide film wet etching process to remove the heterogeneous substance layer. The oxide film dry etching process is performed by using a C2F6 gas under the pressures of 5mT-9mT.