METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to improve yield by effectively eliminating a possibility that a metal layer can be filled in a contact hole in forming the contact hole for connecting upper and lower structures of the device. CONSTITUTION: A lower wiring is formed on a substrate having a step difference. An interlayer dielectric covering the entire structure is formed. An etching mask for defining a contact hole formation region is formed on the interlayer dielectric. The interlayer dielectric is wet-etched to form an undercut at the entrance to the contact hole. The etching mask is removed. A photoresist layer is applied on the entire structure, and the photoresist is entirely etched to leave the photoresist layer within the contact hole in the lower portion of the undercut. The entrance to the contact hole is tilted slowly by performing a physical etching process using Ar. The photoresist layer is eliminated.