| 摘要 |
PURPOSE: A method for forming an aluminum metal wire of a semiconductor device is provided to reduce the loss of a lower layer and lower insulation material by over-etching an etching stop layer in a short time. CONSTITUTION: A contact hole is formed by selectively etching an interlayer dielectric(85) formed on a semiconductor substrate(80). Then, TiN anti-diffusion film(86) and Al film(87) are sequentially formed on the structure. An etching mask for defining a metal wire is formed on the Al film(87). Then, the Al film(87) is plasma-etched until the TiN anti-diffusion film(86) is exposed, thereby electrically connecting the Al film metal wire through the TiN anti-diffusion film(86). After that, the TiN film(86) is removed by performing the plasma etching process. Then, the etching mask is removed.
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