METHOD FOR FORMING MULTI-LAYER FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a multi-layer film of a semiconductor device is provided to reduce the electric fault of the semiconductor device by preventing the stringer from remaining in the semiconductor device. CONSTITUTION: The first layer is formed on a semiconductor wafer(30). A plurality of photoresist patterns are formed on the first layer. Then, the first layer pattern is formed by etching the first layer in such a manner that a side of the first layer has a negative slope. At this time, the first photoresist pattern is used as an etching mask. After that, the second layer for covering the first layer is formed on the semiconductor wafer(30). Then, the third layer is formed on the second layer. Then, the second photoresist pattern is formed. After that, the third layer, the second layer and the first layer are etched by using the second photoresist pattern as a mask.