| 摘要 |
PURPOSE: A repair fuse circuit is provided to normally repair by comparing a current flowing through a repair fuse with a reference current although the repair fuse has not been completely cut and a polysilicon remains. CONSTITUTION: A repair fuse circuit of a semiconductor memory device repairs a failed memory cell by comparing a current flowing through a repair fuse with a reference current. The repair fuse circuit includes a fuse connecting portion(10), a current comparison portion(30) and a repair signal output portion(50). The fuse connecting portion has a fuse connected with a supply voltage. The current comparison portion has a reference current generator(20) generating the reference current, a current comparator(30) comparing the current flowing through the repair fuse with the reference current and a current controller(40) controlling a driving of the current comparator in response to a chip selection signal. The repair signal output portion inputs an output signal of the current comparison portion and generates a repair signal.
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