FLASH MEMORY DEVICE CAPABLE OF MINIMIZING SUBSTRATE VOLTAGE BOUNCING AND METHOD FOR PROGRAMMING THE DEVICE

摘要

PURPOSE: A NAND flash memory device and a method for programming are provided to minimize a substrate voltage bouncing to prevent an under program and a program disturbance. CONSTITUTION: A nonvolatile memory device includes a plurality of memory blocks, a plurality of block selecting control circuits(20_1-20_i), and a controller(100). The plurality of memory blocks includes a plurality of memory cells which each are arranged with a matrix form of rows and columns. The plurality of block selecting control circuits correspond to the memory blocks and respectively connect the rows of a corresponding memory block to corresponding driving lines during a program cycle. The controller controls the block selecting control circuits so that each row of the memory blocks is connected to the corresponding driving lines during a bit line set up period and a recovery period. Each row of the memory blocks is set up with a predetermined voltage during the bit line set up period of the program cycle.