| 摘要 |
PROBLEM TO BE SOLVED: To realize improvement in the transistor characteristics (operating characteristics) of a optoelectronic transducer device, the improvement in the isolation characteristics between pixels in the device and the improvement in the breakdown strength characteristics of the device. SOLUTION: A optoelectronic transducer device has a first conductivity well layer 12 provided in a semiconductor substrate 11 and a second conductivity light receiving region (photoelectric conversion region) 14 provided in the well layer 12 and a first conductivity impurity layer (depletion layer forming layer) 20 of an impurity concentration set lower than that in the layer 2, to be able to reduce coupling capacitance and a second conductivity impurity layer (reverse depletion layer forming layer) 17 of an impurity concentration set lower than that in the above region 14 are provided at positions on the lower side of the region 14, in such a way that at least each one out of the layers 20 and 17 is positioned in the inner side of the region 14 in a plan view stretchably a depletion layer.
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