METHOD FOR FORMING INNER CAPACITOR IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: An inner capacitor formation method in semiconductor devices is provided to be capable of preventing generation of voids within a sacrificial film by use of an anti-reflection film. CONSTITUTION: The first sacrifice film(21) on a substrate is formed in which a given underlying layer is formed. An anti-reflection film(22) is formed on the first sacrifice film. The anti-reflection film and the first sacrificial film in the portion in which a storage electrode will be formed are selectively etched. The anti-reflection film in the edge portion on the first sacrificial film is removed and is then experienced by cleaning process. A conductive film for a charge storage electrode is formed along the entire surface. The second sacrifice film(25) is formed on the conductive film and the exposed conductive film is then removed. The exposed oxidization prevention film is removed, and the first and second sacrificial film are then removed to form a charge storage electrode. Then, a dielectric film and a plate electrod are formed on the charge storage electrode.