发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To utilize a capacitor for adjustment with a fixed value that does not follow changes in input/output level by using an element separation oxide film as the dielectric film of the capacitor for adjusting each input/output terminal capacity. SOLUTION: An element isolation oxide film (LOCOS) 2 is formed on a substrate 4, for example, to be electrically insulated from adjacent elements. The element isolation oxide film 2 is an insulation film and separates MOS transistors used as the dielectric film of a capacitor. The element isolation oxide film 2 for insulating the adjacent element formation regions is used as the dielectric film of a capacitor 1 for adjustment to compose the capacitor. A contact 3b is branched from the middle of metal wiring 3a for connecting an input terminal IN to an initial-stage circuit and is connected to a lower-layer polysilicon 3c. The capacitor 1 for adjustment is composed by using the element isolation oxide film 2 as a dielectric film and including the element separation oxide film 2, as a dielectric film, between the polysilicon 3c as an electrode, that is penetrated through an interlayer insulation film 6 and the substrate(SUB) 4.
申请公布号 JP2001007284(A) 申请公布日期 2001.01.12
申请号 JP19990171335 申请日期 1999.06.17
申请人 NEC CORP 发明人 FUJIMA SHIRO
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L27/04 主分类号 H01L27/04
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