| 摘要 |
PROBLEM TO BE SOLVED: To reduce leakage current in the diffused layer of a memory cell. SOLUTION: A diffused layer 2 in a memory cell is an n-type semiconductor memory, and the memory cell has an n-type region 4. The region 4 is one formed directly under a p-type well 3 under at least an element isolation oxide film and the concentration in the region 4 is set higher than that in the layer 2. This region 4 is turned into a gettering layer, and a leakage current in the memory cell is reduced. |
