METHOD FOR FORMING ELECTROSTATIC THERMAL JUNCTION OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A electrostatic thermal junction formation method of a semiconductor substrate is provided to short a junction process time and reduce a cost of a products by deposing a mixed compound of a metal oxide and a silicon oxide on the substrate to use as an intermediate layer for connecting both of semiconductor substrates. CONSTITUTION: A semiconductor substrate is cleaned by a cleaning process. A mixed compound of a metal oxide and a silicon oxide is deposited on the cleaned substrate. A substrate having the mixed compound is cleaned. The substrate having the mixed compound is applied by a temperature of 10-500 °C and a general semiconductor substrate is applied by a voltage of 10-400 V and both substrate is connected. Acetone, methanol, or deionized water are used for the cleaning process. The deposition process of the mixed compounds of the metal oxide and a silicon oxide is performed by using an electron beam deposition method.