| 摘要 |
<p>A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer (102) over the substrate, forming an inorganic dielectric layer (104) over the barrier layer, and forming a low dielectric constant layer (106) over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench (110) in the low dielectric constant layer (106) using a first etch chemistry, and forming a via (112) in the inorganic dielectric layer (104) using a second etch chemistry, such that the via (112) is within the trench (110). In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.</p> |
