| 摘要 |
<p>A method for producing a vertical semiconductor device having a structural part where n - semiconductor regions and p - semiconductor regions are alternated without burying in a trench by epitaxial growth. A p - silicon layer (13) to serve as a p - semiconductor regions (12) is formed. From the side wall of a first trench (22) formed in the p - silicon layer (13), n - type impurities are diffused into the p - silicon layer (13) to form a n - semiconductor region (11).</p> |
