发明名称 SEMICONDUCTOR MEMORY WITH BUILT-IN REDUNDANT CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory with built-in redundant circuit which decreases capital investment and cost necessary for relieving defectives, and also shortens an examination time. SOLUTION: As a circuit for relief processing by detecting a defective part and replacing it with a redundant circuit, this device comprises therein a test controller 33, an APG(Algorithmic Pattern Generator) 32, a replacement line selecting circuit 31a, a row and column spare part 11, 21, a row and column replacing circuit 12, 22, a row line and column line data reading circuit 13, 14, a row line and column line comparison circuit 14, 24, a row and column defective counter 15, 25, a row and column defective number storing register 16, 26, and a replacement circuit 41. Thus, the device with defects can be relieved only by inputting a simple signal such as an external trigger to the test controller.
申请公布号 JP2001006388(A) 申请公布日期 2001.01.12
申请号 JP19990176770 申请日期 1999.06.23
申请人 TOSHIBA CORP 发明人 SATO TSUNEHIRO
分类号 G06F12/16;G11C29/00;G11C29/04;G11C29/44;(IPC1-7):G11C29/00 主分类号 G06F12/16
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