摘要 |
To produce a magnetic field in a vacuum chamber of a sputtering device, the magnetron unit includes a plurality of magnet units on a base plate such that the magnetic lines of force adjacent magnet units are balanced. In this structure, the number of the magnetic lines of force toward a workpiece (semiconductor wafer) from the target of the sputtering device decreases, and the self bias on the wafer is zero or considerably low. As a result, the effects of ion bombardment on the wafer decrease, thus preventing the increase in internal stress.
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申请人 |
APPLIED MATERIALS, INC.;AIDA, HISASHI;HASHIMOTO, SHUNICHI;AKIBA, FUMINORI;HARA, KOJI;HINATA, NAOKI |
发明人 |
AIDA, HISASHI;HASHIMOTO, SHUNICHI;AKIBA, FUMINORI;HARA, KOJI;HINATA, NAOKI |