发明名称 MAGNETRON UNIT AND SPUTTERING DEVICE
摘要 To produce a magnetic field in a vacuum chamber of a sputtering device, the magnetron unit includes a plurality of magnet units on a base plate such that the magnetic lines of force adjacent magnet units are balanced. In this structure, the number of the magnetic lines of force toward a workpiece (semiconductor wafer) from the target of the sputtering device decreases, and the self bias on the wafer is zero or considerably low. As a result, the effects of ion bombardment on the wafer decrease, thus preventing the increase in internal stress.
申请公布号 WO0102618(A1) 申请公布日期 2001.01.11
申请号 WO2000JP04404 申请日期 2000.07.03
申请人 APPLIED MATERIALS, INC.;AIDA, HISASHI;HASHIMOTO, SHUNICHI;AKIBA, FUMINORI;HARA, KOJI;HINATA, NAOKI 发明人 AIDA, HISASHI;HASHIMOTO, SHUNICHI;AKIBA, FUMINORI;HARA, KOJI;HINATA, NAOKI
分类号 C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/35
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