| 摘要 |
<p>A back illuminated semiconductor imaging device is disclosed. The device includes a substrate (102) having at least first (106) and second (104) surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate includes a conducting layer, a region, and a plurality of doped regions. The conducting layer includes a first type dopants incorporated near the first surface. The region includes a heavily doped area (108) within the substrate near the second surface. The plurality of doped regions includes a second type dopant formed on the second surface. The circuit layer is formed over the second surface to provide gate contacts to and readout circuits for the plurality of doped regions. The readout circuit provides readout of optical signals from pixels.</p> |
