SEMICONDUCTOR DEVICE HAVING BUFFER LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a fabrication method thereof is provided to indicate an optimum internal pressure property and to prevent a latch-up by forming a buffer layer using an impurity of a slow diffusion speed and a conductive layer using the impurity of a high diffusion speed. CONSTITUTION: A buffer layer(120) of a second conductive type in a high density is formed on a semiconductor substrate(110) of a first conductive type. A conductive layer(130) of a second conductive type is formed on the buffer by using an impurity having at least 2 times a high diffusion speed more than the diffusion speed of the impurity implanted at the buffer layer. A well(140) of a first conductive type is formed on the conductive layer of the second conductive type. A diffusion region(142) of the second conductive type is formed on the well of the first conductive type. A phosphorus is used as the impurity for forming the conductive layer of the second conductive type and an arsenic is used as the impurity for forming the buffer layer of the second conductive type.