| 摘要 |
A surface is processed by a method comprising: supplying a first gas, e.g. TEOS, through a passage disposed near a surface of a wafer, the first gas being insusceptible to heating by microwave; and supplying a second gas, susceptible to heating be microwave, e.g., H2O, through a passage disposed near the wafer surface. A microwave generating unit disposed near the wafer surface irradiates TEOS supplied from the first supplying passage and H2O gas supplied from the second gas supplying passage with microwave, selectively heating only H2O so that TEOS reacts with H2O to form an SiO2 film on the wafer surface. The inventive method enables precise control of the CVD reaction to form a thin film having good step coverage.
|
