| 摘要 |
A metal wire forming method for a semiconductor device includes the step of forming a first insulator film over a substrate having at least a second insulator film formed thereon and a first conductive layer formed on the second insulator film. Next, a photosensitive film is formed on the first insulator film, and the photosensitive film is exposed and developed according to a contact hole pattern. This exposes a portion of the first insulator film, and the exposed portion is then etched using the photosensitive film as a mask to form a contact hole in the first insulator film. The method further includes the steps of exposing and developing the photosensitive film according to a trench pattern which includes the contact hole pattern, and etching the first insulator film using the photosensitive film as the mask so that a trench having a predetermined depth is formed in the first insulator film and the first conductive layer is exposed via the contact hole. Next, the photosensitive film is removed, and the trench and the contact hole are filled with a conductive material to form a second conductive layer electrically connected to the first conductive layer.
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