发明名称 |
Method of manufacturing photo diode |
摘要 |
A structure of a photo diode and a method of manufacturing a photo diode comprise the steps of providing a substrate having an isolation region and a device region. A doped region is formed adjacent to the isolation region in the substrate by performing an ion implantation step and an annealing step. Next, a protective layer utilized to prevent the plasma damage is formed on the substrate and the isolation region, and an inter-layer dielectric layer is formed on the protective layer. Thereafter, a contact hole is formed to expose a portion of the doped region by patterning the inter-layer dielectric layer and the protective layer, and a contact plug is formed by filling the contact hole with a conductive material.
|
申请公布号 |
US6171882(B1) |
申请公布日期 |
2001.01.09 |
申请号 |
US19980210526 |
申请日期 |
1998.12.11 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHIEN CHENG-HUNG;HSU JEN-YAO;PAN JUI-HSIANG |
分类号 |
H01L21/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|