发明名称 |
Method for manufacturing a semiconductor device |
摘要 |
A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
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申请公布号 |
US6171890(B1) |
申请公布日期 |
2001.01.09 |
申请号 |
US19990421229 |
申请日期 |
1999.10.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ADACHI HIROKI;TAKENOUCHI AKIRA;TAKEMURA YASUHIKO |
分类号 |
H01L21/20;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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