| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent a direct contact between a diffusion blocking layer and a high dielectric layer, even when a misalignment between a contact hole and a storage electrode mask occurs in forming a storage node. CONSTITUTION: An interlayer dielectric(2) is formed on a semiconductor substrate(1). A contact hole exposing a semiconductor substrate through an interlayer dielectric is formed. A plug is formed in the contact hole by stacking the first conductive layer which is to be a polysilicon layer, the first diffusion blocking layer and a storage electrode. The second conductive layer is formed and patterned on the resultant structure to form the storage electrode. A dielectric layer and a plate electrode are formed on the storage electrode.
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