METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve etching tolerance of inorganic or organic low dielectric material regarding an oxygen plasma etching process, by forming a silicon oxide layer on the surface of the inorganic or organic low dielectric material using a vapor or liquid sililation process. CONSTITUTION: The first pad nitride layer(3) and a metal-1(5) are sequentially formed on a silicon substrate(1). The second pad nitride layer(7) is formed on the entire structure. A low dielectric material is deposited on the second pad nitride layer. The low dielectric material is thermally processed to cause a thermal bridge of the low dielectric material. A photoresist pattern(11) is formed on the low dielectric material layer. The low dielectric material layer and the second pad nitride layer are etched by using the photoresist pattern as an etching mask, so as to form a via contact hole. The exposed low dielectric material layer of the via contact hole is sililated by using a sililation agent. The sililated portion of the low dielectric material layer is etched to form a silicon dioxide layer by a dry etching process while the photoresist is eliminated.