| 摘要 |
PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to prevent pores from being generated in a gate electrode, by using an amorphous silicon layer as a conductive material constituting the gate electrode. CONSTITUTION: A gate oxidation layer(12) is formed on a semiconductor substrate(11). An amorphous silicon layer is deposited on the gate oxidation layer. An amorphous transition metal silicide layer is deposited on the amorphous silicon layer. The amorphous transition metal silicide layer is crystallized. A hard mask layer (16) is deposited on the crystallized transition metal silicide layer. A predetermined portion of the layers is patterned to form a gate electrode.
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