| 摘要 |
PURPOSE: A Schottky barrier diode is provided to improve a forward voltage drop characteristic, by lowering a potential barrier at a junction part using a high density N-type shallow junction even in a physical limitation and in a limited junction area of a barrier metal layer. CONSTITUTION: A Schottky barrier diode comprises a silicon substrate(102), a high density P-type guide ring(108), a high density N-type shallow junction(112), an oxidation layer(104,106) and a metal layer(116) for an electrode. The silicon substrate has a structure wherein a low density N-type epi-region is grown on a high density N-type region. The P-type guide rings are separated from each other by a predetermined interval, on the surface of the epi-region. The high density N-type shallow junction is locally formed on the surface of the epi-region between the guide rings, so as not to contact the guide rings. The oxidation layer is formed on the epi-region in an outer part of the guide ring, the epi-region including a part of the surface of the guide ring, so that a portion to be used as the junction part is exposed. The metal layer for the electrode is formed on a predetermined part of the oxidation layer including the junction part by intervening a barrier metal layer.
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