METHOD FOR MANUFACTURING AN ISOLATION STRUCTURE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an isolation structure of a semiconductor device is provided to prevent a characteristic of the semiconductor device from being deteriorated, by having an etching rate of the isolation structure differ from that of an oxidation layer between a substrate and a nitride layer by an impurity ion injection. CONSTITUTION: An oxidation layer(2) and a nitride layer(3) are sequentially evaporated on a substrate(1). A part of the nitride layer and oxidation layer is eliminated by a photolithograpy process to expose a part of an upper substrate region. A predetermined depth of the exposed substrate is etched to form a trench in the substrate. An oxidation layer is evaporated on the entire structure and is planarized to form an isolation structure. Impurity ions are injected into the isolation structure. The oxidation layer under the nitride layer is eliminated through a cleaning process after the nitride layer is eliminated.