| 摘要 |
<p>A plasma processing reactor (300) for processing a semiconductor substrate (312) is disclosed. The apparatus includes a chamber (302). Additionally, the chamber (302) includes a bottom electrode (314) that is configured for holding the substrate. The apparatus further includes a stationary uniformity ring (350) that is configured to surround the periphery of the substrate. Furthermore, the stationary uniformity ring is coupled to a portion of the chamber and disposed above the bottom electrode in a spaced apart relationship to form a vertical space (354) above the bottom electrode. Further, the vertical space is configured to provide room for ingress and egress of the substrate. Also, the stationary uniformity ring has a thickness (380) that substantially reduces diffusion of a first species from outside the stationary uniformity ring toward an edge of the substrate.</p> |
