发明名称 |
PHASE-SHIFT PHOTOMASK FOR PATTERNING HIGH DENSITY FEATURES |
摘要 |
<p>A method for forming a photomask includes providing a transparent substrate and forming an opaque layer over at least a first portion of the transparent substrate. The opaque layer is patterned to define a mask pattern and expose at least a second portion of the transparent substrate. The second portion is etched to define a phase shifting region. The width of the phase shifting region defines a critical dimension. The critical dimension is measured, and the phase shifting region is etched based on the critical dimension to undercut the optically opaque layer. A photomask includes a transparent substrate and a phase shitting region defined in the transparent substrate. The phase shifting region includes sloped sidewalls having a slope of less than about 85 DEG .</p> |
申请公布号 |
WO0101198(A1) |
申请公布日期 |
2001.01.04 |
申请号 |
WO2000US00697 |
申请日期 |
2000.01.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NISTLER, JOHN, L.;BROWN, STUART, E. |
分类号 |
G03F1/28;G03F1/30;(IPC1-7):G03F1/00 |
主分类号 |
G03F1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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