发明名称 |
ELEVATED STATIONARY UNIFORMITY RING |
摘要 |
A plasma processing reactor (300) for processing a semiconductor substrate (312) is disclosed. The apparatus includes a chamber (302). Additionally, the chamber (302) includes a bottom electrode (314) that is configured for holding the substrate. The apparatus further includes a stationary uniformity ring (350) that is configured to surround the periphery of the substrate. Furthermore, the stationary uniformity ring is coupled to a portion of the chamber and disposed above the bottom electrode in a spaced apart relationship to form a vertical space (354) above the bottom electrode. Further, the vertical space is configured to provide room for ingress and egress of the substrate. Also, the stationary uniformity ring has a thickness (380) that substantially reduces diffusion of a first species from outside the stationary uniformity ring toward an edge of the substrate. |
申请公布号 |
WO0101444(A1) |
申请公布日期 |
2001.01.04 |
申请号 |
WO2000US18233 |
申请日期 |
2000.06.29 |
申请人 |
LAM RESEARCH CORPORATION;NI, TUQIANG;COLLISON, WENLI |
发明人 |
NI, TUQIANG;COLLISON, WENLI |
分类号 |
H01L21/302;H01J37/32;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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