| 摘要 |
<p>The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.</p> |
