| 摘要 |
A semiconductor structure having multiple thicknesses of high-k gate dielectrics and a process of manufacture. In one embodiment, semiconductor structure is provided that includes a substrate, and a high permittivity layer is disposed on the substrate, the high permittivity layer having two or more areas with different thicknesses. A plurality of gate electrodes are disposed in the two or more areas on the high permittivity layer. In another embodiment, a process for constructing a semiconductor structure includes depositing a high permittivity layer on the substrate, the high permittivity layer having a first thickness. A first set of one or more gate electrodes are formed on the high permittivity layer having the first thickness. Selected portions of the high permittivity layer are then removed, whereby the high permittivity layer is reduced to a second thickness. Then a second set of gate electrodes are formed on the selected portions of the high permittivity layer having the second thickness.
|
