Process for the production of semiconductor substrate having silicon-on-insulating structure and process for the production of semiconductor device

摘要

A process for the production of a semiconductor substrate having a silicon-on-insulator structure comprising the steps of; (A) ion-implanting a semiconductor substrate to form a buried polishing-stop layer inside the semiconductor substrate, (B) patterning a portion of the semiconductor substrate above the buried polishing-stop layer to form a trench portion which reaches the buried polishing-stop layer, thereby forming a semiconductor layer on the buried polishing-stop layer, (C) forming an insulating layer on the semiconductor layer and the buried polishing-stop layer, (D) bonding the semiconductor substrate and a supporting substrate to each other through the insulating layer, (E) grinding and polishing the semiconductor substrate from its rear surface to expose the buried polishing-stop layer, and (F) removing the buried polishing-stop layer to expose the semiconductor layer, in which the semiconductor layer has a thickness of 2x10-8 m to 1x10-7 m and the buried polishing-stop layer has a thickness of 2x10-9 m to 1x10-8 m.