| 摘要 |
The amplifier cell (CE) comprises two gate lines (SG1-SG'1, SG2-SG'2) and one drain line (SD-SD') with band pass filters (FG1,FG2 and FD) connected by field-effect transistors (Ts1,Ts2 and Tg). The transistors (Ts1,Ts2) are in common source connection, with the gates connected to the respective gate lines, and the drains interconnected. The transistor (Tg) is in common gate connection, with the source connected via an inductor (Li) to the drains of two transistors (Ts1,Ts2), and the drain connected to the filter (FD) and also via an additional capacitor (Cdd) to the ground. The inductor is arranged so that the phase velocities in the gate line and the drain line are equal, and the gate width of transistor (Tg) is substantially equal to the sum of gate widths of transistors (Ts1,Ts2) in common source connection. An amplifier comprises several basic cells (CE) substantially identical, connected between the gate lines and the drain line. The amplifier with three lines (SG1,SD,SG2) having the same characteristic impedance is connected so that the input stage is a Wilkinson divider. The filter elements are chosen so that the drain line presents a characteristic impedance which is a sub-multiple, inn particular half or quarter, of that of the gate lines of the basic cell, and two basic cells are connected in parallel so that all gate lines are connected to an upstream drain line. In another embodiment, the drain lines of two basic cells are connected to two gate lines of a third basic cell connected upstream where the drain line has a characteristic impedance equal to half that of the gate lines and the drain lines of cells connected in parallel. The field-effect transistors are implemented by use of Gallium Arsenide (GaAs) technology.
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