IMPROVING DEVICE PERFORMANCE BY EMPLOYING AN IMPROVED METHOD FOR FORMING HALO IMPLANTS

摘要

In accordance with the present invention, a method for forming a halo implant for semiconductor devices (100) includes the steps of providing a substrate (102) having a gate stack (104) formed thereon. The gate stack includes a gate conductor (108). The gate stack extends a distance in a first direction on a surface of the substrate. Dopants of a first conductivity and dosage are provided at an acute angle relative to a normal to the surface of the substrate. The dopants are also directed at an angle of between about 30 degrees to about 60 degrees relative to the first direction such that the dopants are implanted below the gate conductor to form a halo implant (112) for preventing current leakage for a semiconductor device.