Verfahren zur Herstellung einer nichtflüchtigen Halbleiter-Speicherzelle

摘要

The invention relates to a method for producing a non-volatile semiconductor memory cell. According to said method, a tunnel area (TB) overlapping a tunnel layer (2) is produced by means of a diagonal implantation (Is), the implantation being essentially directed away from the tunnel area (TB). This ensures that there is minimal damage to the sensitive tunnel layer (2) and to a dielectric layer (4). As a result, it is possible to produce a semiconductor memory cell with extremely reliable charging behavior at a high integration density.